 |  | | |
| PartNumber | MJD45H11-1G | MJD45H11-13 | MJD45H11-1G/MJD44H11-1G |
| Description | Bipolar Transistors - BJT 8A 80V 20W PNP | ||
| Manufacturer | ON Semiconductor | DIODES | - |
| Product Category | Bipolar Transistors - BJT | IC Chips | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DPAK-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 80 V | - | - |
| Collector Base Voltage VCBO | 5 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 1 V | - | - |
| Maximum DC Collector Current | 8 A | - | - |
| Gain Bandwidth Product fT | 90 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MJD45H11 | - | - |
| Height | 6.35 mm | - | - |
| Length | 6.73 mm | - | - |
| Packaging | Tube | - | - |
| Width | 2.38 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 8 A | - | - |
| DC Collector/Base Gain hfe Min | 60 | - | - |
| Pd Power Dissipation | 20 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 75 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.012346 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| MJD45H11-1G | Bipolar Transistors - BJT 8A 80V 20W PNP | ||
| MJD45H11-13 | 全新原装 | ||
| MJD45H11-1G/MJD44H11-1G | 全新原装 | ||
ON Semiconductor |
MJD45H11-1G | Bipolar Transistors - BJT 8A 80V 20W PNP |