 |  | | |
| PartNumber | MJD50TF | MJD50TF/ONSEMI | MJD50TFONSEMI |
| Description | Bipolar Transistors - BJT NPN Epitaxial Sil | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | E | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 400 V | - | - |
| Collector Base Voltage VCBO | 500 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 1 V | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Gain Bandwidth Product fT | 10 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MJD50 | - | - |
| DC Current Gain hFE Max | 150 | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.6 mm | - | - |
| Packaging | Reel | - | - |
| Width | 6.1 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 1 A | - | - |
| DC Collector/Base Gain hfe Min | 30 | - | - |
| Pd Power Dissipation | 15 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | MJD50TF_NL | - | - |
| Unit Weight | 0.009184 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
MJD50TF | Bipolar Transistors - BJT NPN Epitaxial Sil | |
| MJD50TF/ONSEMI | 全新原装 | ||
| MJD50TFONSEMI | 全新原装 | ||
ON Semiconductor |
MJD50TF | TRANS NPN 400V 1A DPAK |