MJE170

MJE170G vs MJE170 vs MJE170STU

 
PartNumberMJE170GMJE170MJE170STU
DescriptionBipolar Transistors - BJT 3A 40V 12.5W PNPBipolar Transistors - BJT 3A 40V 12.5W PNPBipolar Transistors - BJT PNP Epitaxial Sil
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYNY
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-225-3TO-225-3TO-126-3
Transistor PolarityPNPPNPPNP
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max40 V40 V- 40 V
Collector Base Voltage VCBO60 V60 V- 60 V
Emitter Base Voltage VEBO7 V7 V- 7 V
Collector Emitter Saturation Voltage1.7 V1.7 V- 1.7 V
Maximum DC Collector Current3 A3 A3 A
Gain Bandwidth Product fT50 MHz50 MHz50 MHz
Minimum Operating Temperature- 65 C- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesMJE171-MJE170
Height11.04 mm11.04 mm (Max)11 mm
Length7.74 mm7.74 mm (Max)8 mm
PackagingBulkBulk-
Width2.66 mm2.66 mm (Max)3.25 mm
BrandON SemiconductorON SemiconductorON Semiconductor / Fairchild
Continuous Collector Current3 A3 A- 3 A
DC Collector/Base Gain hfe Min505050
Pd Power Dissipation1.5 W1.5 W12.5 W
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity5005001920
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.024022 oz0.068784 oz0.026843 oz
DC Current Gain hFE Max--250
Part # Aliases--MJE170STU_NL
制造商 型号 描述 RFQ
MJE170G Bipolar Transistors - BJT 3A 40V 12.5W PNP
MJE170STU/MJE180 全新原装
ON Semiconductor
ON Semiconductor
MJE170 Bipolar Transistors - BJT 3A 40V 12.5W PNP
MJE170 TRANS PNP 40V 3A TO225AA
MJE170G Bipolar Transistors - BJT 3A 40V 12.5W PNP
MJE170STU TRANS PNP 40V 3A TO-126
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
MJE170STU Bipolar Transistors - BJT PNP Epitaxial Sil
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