MJE350G

MJE350G vs MJE350G MJE350 vs MJE350G(ROHS)

 
PartNumberMJE350GMJE350G MJE350MJE350G(ROHS)
DescriptionBipolar Transistors - BJT 0.5A 300V 20W PNP
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseTO-225-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max300 V--
Collector Base Voltage VCBO3 V--
Emitter Base Voltage VEBO3 V--
Maximum DC Collector Current0.5 A--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesMJE350--
Height11.04 mm--
Length7.74 mm--
PackagingBulk--
Width2.66 mm--
BrandON Semiconductor--
Continuous Collector Current0.5 A--
DC Collector/Base Gain hfe Min30--
Pd Power Dissipation20 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity500--
SubcategoryTransistors--
Unit Weight0.024692 oz--
制造商 型号 描述 RFQ
MJE350G Bipolar Transistors - BJT 0.5A 300V 20W PNP
MJE350G MJE350 全新原装
MJE350G(ROHS) 全新原装
MJE350G/ 全新原装
MJE350G/MJE340G 全新原装
ON Semiconductor
ON Semiconductor
MJE350G Bipolar Transistors - BJT 0.5A 300V 20W PNP
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