MJE371

MJE371 vs MJE371G vs MJE371.

 
PartNumberMJE371MJE371GMJE371.
DescriptionBipolar Transistors - BJT PNP GPBipolar Transistors - BJT 4A 40V 40W PNPTrans GP BJT PNP 40V 4A 3-Pin(3+Tab) TO-225 Box
ManufacturerCentral SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleSMD/SMT-
Package / CaseTO-126TO-225-3-
Transistor PolarityPNPPNP-
Collector Emitter Voltage VCEO Max40 V40 V-
Collector Base Voltage VCBO40 V40 V-
Emitter Base Voltage VEBO4 V4 V-
Collector Emitter Saturation Voltage1.7 V--
Maximum DC Collector Current4 A4 A-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMJE3MJE371-
PackagingBulkBulk-
BrandCentral SemiconductorON Semiconductor-
Continuous Collector Current4 A4 A-
DC Collector/Base Gain hfe Min40 at 1 A, 1 V40-
Pd Power Dissipation40 W40 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity1000500-
SubcategoryTransistorsTransistors-
Part # AliasesMJE371 PBFREE--
Unit Weight0.026843 oz0.004949 oz-
Configuration-Single-
Height-11.04 mm-
Length-7.74 mm-
Width-2.66 mm-
制造商 型号 描述 RFQ
Central Semiconductor
Central Semiconductor
MJE371 Bipolar Transistors - BJT PNP GP
MJE371G Bipolar Transistors - BJT 4A 40V 40W PNP
MJE371. Trans GP BJT PNP 40V 4A 3-Pin(3+Tab) TO-225 Box
MJE371G. Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:40V, Transition Frequency ft:-, Power Dissipation Pd:40W, DC Collector Current:4A, DC Current Gain hFE:40hFE, No. of Pins:3Pins, Oper
ON Semiconductor
ON Semiconductor
MJE371 TRANS PNP 40V 4A TO225AA
MJE371G Bipolar Transistors - BJT 4A 40V 40W PNP
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