 |  | | |
| PartNumber | MMBT3906LT1H | MMBT3906LT1HTSA1 | MMBT3906LT1H-WS |
| Description | Bipolar Transistors - BJT SS SOT23 GP XSTR PBFREE | Bipolar Transistors - BJT AF TRANS GP BJT PNP 40V 0.2A | |
| Manufacturer | ON Semiconductor | Infineon | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Series | MMBT3906L | MMBT3906 | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | Infineon Technologies | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | SOT-23-3 | - |
| Transistor Polarity | - | PNP | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 40 V | - |
| Collector Base Voltage VCBO | - | 40 V | - |
| Emitter Base Voltage VEBO | - | 6 V | - |
| Collector Emitter Saturation Voltage | - | 0.4 V | - |
| Gain Bandwidth Product fT | - | 250 MHz | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Continuous Collector Current | - | 200 mA | - |
| Pd Power Dissipation | - | 330 mW | - |
| Part # Aliases | - | 3906 LT1 MMBT MMBT396LT1XT SP000011678 | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| MMBT3906LT1H | Bipolar Transistors - BJT SS SOT23 GP XSTR PBFREE | ||
| MMBT3906LT1H-WS | 全新原装 | ||
Infineon Technologies |
MMBT3906LT1HTSA1 | Bipolar Transistors - BJT AF TRANS GP BJT PNP 40V 0.2A | |
| MMBT3906LT1HTSA1 | TRANS PNP 40V 0.2A SOT-23 | ||
ON Semiconductor |
MMBT3906LT1H | TRANS PNP 40V 200MA BIPO SOT23-3 |