MMDTA

MMDTA42-7-F vs MMDTA114YE vs MMDTA06-7

 
PartNumberMMDTA42-7-FMMDTA114YEMMDTA06-7
DescriptionBipolar Transistors - BJT NPN BIPOLARTRANS 2NPN 80V 0.5A SOT26
ManufacturerDiodes Incorporated-Diodes Incorporated
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Arrays
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-26-6--
Transistor PolarityNPN-NPN
ConfigurationDual-Dual
Collector Emitter Voltage VCEO Max300 V--
Collector Base Voltage VCBO300 V--
Emitter Base Voltage VEBO6 V--
Maximum DC Collector Current0.5 A-1 A
Gain Bandwidth Product fT50 MHz-163 MHz
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesMMDTA-MMDTA
Height1.1 mm--
Length3 mm--
PackagingReel-Digi-ReelR Alternate Packaging
Width1.6 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min25--
Pd Power Dissipation300 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.001058 oz--
Package Case--SOT-23-6
Mounting Type--Surface Mount
Supplier Device Package--SOT-26
Power Max--900mW
Transistor Type--2 NPN (Dual)
Current Collector Ic Max--500mA
Voltage Collector Emitter Breakdown Max--80V
DC Current Gain hFE Min Ic Vce--100 @ 10mA, 1V
Vce Saturation Max Ib Ic--250mV @ 10mA, 100mA
Current Collector Cutoff Max--100nA
Frequency Transition--163MHz
Pd Power Dissipation--1.28 W
Collector Emitter Voltage VCEO Max--80 V
Collector Emitter Saturation Voltage--0.25 V
Collector Base Voltage VCBO--80 V
Emitter Base Voltage VEBO--4 V
DC Collector Base Gain hfe Min--100 at 100 mA at 1 V
制造商 型号 描述 RFQ
Diodes Incorporated
Diodes Incorporated
MMDTA42-7-F Bipolar Transistors - BJT NPN BIPOLAR
MMDTA114YE 全新原装
MMDTA42-7-F TRANS 2NPN 300V 0.5A SOT26
MMDTA06-7 TRANS 2NPN 80V 0.5A SOT26
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