| PartNumber | MMST5551-7-F | MMST5551-TP | MMST5551-7 |
| Description | Bipolar Transistors - BJT NPN BIPOLAR | Bipolar Transistors - BJT 200mA 160V | Bipolar Transistors - BJT NPN BIPOLAR |
| Manufacturer | Diodes Incorporated | Micro Commercial Components (MCC) | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | N |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-323-3 | SOT-323-3 | SOT-323-3 |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 160 V | 160 V | 160 V |
| Collector Base Voltage VCBO | 180 V | 180 V | 180 V |
| Emitter Base Voltage VEBO | 6 V | 5 V | 6 V |
| Collector Emitter Saturation Voltage | 150 mV | - | 150 mV |
| Maximum DC Collector Current | 200 mA | 0.2 A | 200 mA |
| Gain Bandwidth Product fT | 300 MHz | 300 MHz | 300 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | MMST5551 | MMST5551 | MMST5551 |
| DC Current Gain hFE Max | 250 | - | 250 |
| Height | 1 mm | 1.2 mm | 1 mm |
| Length | 2.2 mm | 1.8 mm | 2.2 mm |
| Packaging | Reel | Reel | Reel |
| Width | 1.35 mm | 1.35 mm | 1.35 mm |
| Brand | Diodes Incorporated | Micro Commercial Components (MCC) | Diodes Incorporated |
| Continuous Collector Current | 200 mA | - | 200 mA |
| DC Collector/Base Gain hfe Min | 30 | 80 | 30 |
| Pd Power Dissipation | 200 mW | 200 mW | 200 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.000176 oz | 0.000176 oz | 0.000176 oz |