| PartNumber | MMSTA56Q-7-F | MMSTA56Q-7 | MMSTA63-7 |
| Description | Bipolar Transistors - BJT General Purpose Transistor | Bipolar Transistors - BJT GenPurpTranstr | Darlington Transistors -500V 200mW |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Darlington Transistors |
| RoHS | Y | Y | N |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Transistor Polarity | PNP | PNP | PNP |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | - 80 V | - 80 V | 30 V |
| Collector Base Voltage VCBO | - 80 V | - 80 V | 30 V |
| Emitter Base Voltage VEBO | - 4 V | - 4 V | 10 V |
| Collector Emitter Saturation Voltage | - 0.25 V | - 0.25 V | - |
| Gain Bandwidth Product fT | 50 MHz | 50 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | MMSTA56Q | MMSTA56Q | MMSTA63 |
| Packaging | Reel | Reel | Reel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Continuous Collector Current | - 500 mA | - 500 mA | - 0.5 A |
| DC Collector/Base Gain hfe Min | 100 | 100 | 5000, 10000 |
| Pd Power Dissipation | 200 mW | 200 mW | 200 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | Darlington Transistors |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Package / Case | - | SOT-323-3 | SOT-323 |
| Maximum DC Collector Current | - | - 500 mA | 0.5 A |
| Maximum Collector Cut off Current | - | - | 0.1 uA |
| Height | - | - | 1 mm |
| Length | - | - | 2.2 mm |
| Width | - | - | 1.35 mm |
| Unit Weight | - | - | 0.000212 oz |