 |  | | |
| PartNumber | MRF7S21210HR3 | MRF7S21210HR5 | MRF7S21210 |
| Description | RF MOSFET Transistors HV7 2.1GHZ 63W NI780H | RF MOSFET Transistors HV7 2.1GHZ 63W NI780H | |
| Manufacturer | NXP | NXP | - |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors | - |
| RoHS | Y | Y | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Technology | Si | Si | - |
| Vds Drain Source Breakdown Voltage | 65 V | 65 V | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | NI-780 | NI-780-2 | - |
| Packaging | Reel | Reel | - |
| Configuration | Single | Single | - |
| Height | 4.32 mm | - | - |
| Length | 34.16 mm | - | - |
| Type | RF Power MOSFET | RF Power MOSFET | - |
| Width | 9.91 mm | - | - |
| Brand | NXP / Freescale | NXP / Freescale | - |
| Channel Mode | Enhancement | - | - |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
| Factory Pack Quantity | 250 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Vgs Gate Source Voltage | - 6 V, 10 V | 10 V | - |
| Unit Weight | 0.226635 oz | 0.226635 oz | - |
| Gain | - | 18.5 dB | - |
| Output Power | - | 63 W | - |
| Operating Frequency | - | 2.11 GHz to 2.17 GHz | - |
| Vgs th Gate Source Threshold Voltage | - | 2.7 V | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
NXP / Freescale |
MRF7S21210HR3 | RF MOSFET Transistors HV7 2.1GHZ 63W NI780H | |
| MRF7S21210HR5 | RF MOSFET Transistors HV7 2.1GHZ 63W NI780H | ||
| MRF7S21210 | 全新原装 | ||
| MRF7S21210HS | 全新原装 | ||
NXP Semiconductors |
MRF7S21210HR5 | FET RF 65V 2.17GHZ NI-780 | |
| MRF7S21210HSR3 | FET RF 65V 2.17GHZ NI-780S | ||
| MRF7S21210HR3 | FET RF 65V 2.17GHZ NI-780 | ||
| MRF7S21210HSR5 | FET RF 65V 2.17GHZ NI-780S |