 |  | | |
| PartNumber | MSA1162YT1G | MSA1162YT1G , D1FL60 | MSA1162YT1GP |
| Description | Bipolar Transistors - BJT 100mA 60V PNP | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-59-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 7 V | - | - |
| Collector Emitter Saturation Voltage | 0.5 V | - | - |
| Maximum DC Collector Current | 0.1 A | - | - |
| Gain Bandwidth Product fT | 80 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Height | 1.09 mm | - | - |
| Length | 2.9 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.5 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 0.1 uA | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000282 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor |
MSA1162YT1G | Bipolar Transistors - BJT 100mA 60V PNP | |
| MSA1162YT1G | TRANS PNP 50V 0.1A SC-59 | ||
| MSA1162YT1G , D1FL60 | 全新原装 | ||
| MSA1162YT1GP | 全新原装 |