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| PartNumber | MT3S111P(TE12L,F) | MT3S111(TE85L,F) | MT3S113(TE85L,F) |
| Description | RF Bipolar Transistors RF Bipolar Transistor .1A 1W | RF Bipolar Transistors RF Bipolar Transistor .1A 700mW | RF Bipolar Transistors RF Bipolar Transistor .1A 800mW |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | RF Bipolar Transistors | RF Bipolar Transistors | RF Bipolar Transistors |
| RoHS | Y | Y | Y |
| Series | MT3S111P | MT3S111 | MT3S113 |
| Transistor Type | Bipolar | Bipolar | Bipolar |
| Technology | SiGe | SiGe | SiGe |
| Transistor Polarity | NPN | NPN | NPN |
| DC Collector/Base Gain hfe Min | 200 | 200 | 200 |
| Collector Emitter Voltage VCEO Max | 6 V | 6 V | 5.3 V |
| Emitter Base Voltage VEBO | 0.6 V | 0.6 V | 0.6 V |
| Continuous Collector Current | 100 mA | 100 mA | 100 mA |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Configuration | Single | Single | Single |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SC-62-3 | TO-236-3 | TO-236-3 |
| Packaging | Reel | Reel | Reel |
| Operating Frequency | 8 GHz | 11.5 GHz | 12.5 GHz |
| Brand | Toshiba | Toshiba | Toshiba |
| Maximum DC Collector Current | 100 mA | 100 mA | 100 mA |
| Pd Power Dissipation | 1 W | 700 mW | 800 mW |
| Product Type | RF Bipolar Transistors | RF Bipolar Transistors | RF Bipolar Transistors |
| Factory Pack Quantity | 1000 | 3000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.001764 oz | 0.000423 oz | - |
