NDD04N

NDD04N50Z-1G vs NDD04N50ZT4G vs NDD04N60Z-1G

 
PartNumberNDD04N50Z-1GNDD04N50ZT4GNDD04N60Z-1G
DescriptionMOSFET 600V 3A HV MOSFET IPAKMOSFET 500V 3A HV MOSFET DPAKMOSFET N-CH 600V 4A IPAK
ManufacturerON SemiconductorON SemiconductorON
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleSMD/SMTThrough Hole
Package / CaseTO-247-3TO-252-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V500 V-
Id Continuous Drain Current3 A3 A-
Rds On Drain Source Resistance2.7 Ohms2.7 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation61 W61 W-
ConfigurationSingleSingleSingle
PackagingTubeReelTube
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandON SemiconductorON Semiconductor-
Product TypeMOSFETMOSFET-
Factory Pack Quantity752500-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Package Case--IPAK-3
Pd Power Dissipation--83 W
Id Continuous Drain Current--4.1 A
Vds Drain Source Breakdown Voltage--600 V
Vgs th Gate Source Threshold Voltage--4.5 V
Rds On Drain Source Resistance--1.8 Ohms
Qg Gate Charge--19 nC
Forward Transconductance Min--3.3 S
制造商 型号 描述 RFQ
ON Semiconductor
ON Semiconductor
NDD04N50Z-1G MOSFET 600V 3A HV MOSFET IPAK
NDD04N50ZT4G MOSFET 500V 3A HV MOSFET DPAK
NDD04N50Z-1G IGBT Transistors MOSFET 600V 3A HV MOSFET IPAK
NDD04N50ZT4G MOSFET N-CH 500V 3A DPAK
NDD04N60Z-1G MOSFET N-CH 600V 4A IPAK
NDD04N60ZT4G MOSFET N-CH 600V 4.1A DPAK
NDD04N50Z_1G INSTOCK
NDD04N50ZT4G FQD3N56C 全新原装
NDD04N60Z1G 全新原装
NDD04N60ZT4GJIA 全新原装
NDD04N50Z 全新原装
NDD04N60Z 全新原装
NDD04N60ZG 全新原装
NDD04N60ZT4 全新原装
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