| PartNumber | NDS9952A | NDS9953A | NDS9957 |
| Description | MOSFET SO-8 N&P-CH ENHANCE | MOSFET SO-8 P-CH ENHANCE | MOSFET DISC BY MFG 2/02 |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | N |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 | SO-8 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel, P-Channel | P-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 60 V |
| Id Continuous Drain Current | 3.7 A | 2.9 A | 2.6 A |
| Rds On Drain Source Resistance | 80 mOhms | 130 mOhms | 160 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2 W | 2 W | 2 W |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | - |
| Height | 1.75 mm | 1.75 mm | 1.75 mm |
| Length | 4.9 mm | 4.9 mm | 4.9 mm |
| Series | NDS9952A | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | 2 P-Channel | 2 N-Channel |
| Width | 3.9 mm | 3.9 mm | 3.9 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 6 S, 4 S | 4 S | - |
| Fall Time | 5 ns, 8 ns | 8 ns | 4 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 13 ns, 21 ns | 21 ns | 11 ns |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 21 ns, 21 ns | 21 ns | 17 ns |
| Typical Turn On Delay Time | 10 ns, 9 ns | 9 ns | 6 ns |
| Part # Aliases | NDS9952A_NL | NDS9953A_NL | - |
| Unit Weight | 0.008113 oz | 0.006596 oz | 0.006596 oz |
| Type | - | MOSFET | - |