NE851M0

NE851M03-A vs NE851M03 vs NE851M03-T1-A

 
PartNumberNE851M03-ANE851M03NE851M03-T1-A
DescriptionRF Bipolar Transistors NPN Low Volt OscRF Bipolar Transistors NPN Low Volt OscRF Bipolar Transistors NPN Low Volt Osc
ManufacturerCEL--
Product CategoryRF Bipolar Transistors--
RoHSY--
Transistor TypeBipolar--
TechnologySi--
DC Collector/Base Gain hfe Min100--
Emitter Base Voltage VEBO1.5 V--
Continuous Collector Current0.1 A--
ConfigurationSingle--
Mounting StyleSMD/SMT--
Package / CaseM03--
DC Current Gain hFE Max145--
TypeRF Bipolar Small Signal--
BrandCEL--
Pd Power Dissipation200 mW (1/5 W)--
Product TypeRF Bipolar Transistors--
SubcategoryTransistors--
制造商 型号 描述 RFQ
CEL
CEL
NE851M03-A RF Bipolar Transistors NPN Low Volt Osc
NE851M03-A RF TRANS NPN 5.5V 4.5GHZ SOT363
NE851M03 RF Bipolar Transistors NPN Low Volt Osc
NE851M03-T1-A RF Bipolar Transistors NPN Low Volt Osc
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