 |  | | |
| PartNumber | NE85633-T1B-A | NE85633-T1B-R24-A | NE85633-T1B |
| Description | RF Bipolar Transistors NPN High Frequency | RF Bipolar Transistors NPN High Frequency | TRANS NPN 1GHZ SOT-23 |
| Manufacturer | CEL | CEL | CEL |
| Product Category | RF Bipolar Transistors | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | - | - |
| Transistor Type | Bipolar | NPN | NPN |
| Technology | Si | Si | - |
| Transistor Polarity | NPN | NPN | - |
| Collector Emitter Voltage VCEO Max | 12 V | - | - |
| Emitter Base Voltage VEBO | 3 V | - | - |
| Continuous Collector Current | 0.1 A | 0.1 A | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | Single | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | - | - |
| Packaging | Reel | Tape & Reel (TR) | Cut Tape (CT) |
| DC Current Gain hFE Max | 250 | - | - |
| Height | 1.1 mm | - | - |
| Length | 2.9 mm | - | - |
| Operating Frequency | 1 GHz | - | - |
| Type | RF Bipolar Small Signal | - | - |
| Width | 1.5 mm | - | - |
| Brand | CEL | - | - |
| Gain Bandwidth Product fT | 7 GHz | - | - |
| Pd Power Dissipation | 200 mW (1/5 W) | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 2SC3356-T1B-A | - | - |
| Unit Weight | 0.000282 oz | 0.007090 oz | - |
| Series | - | - | - |
| Package Case | - | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | - | Surface Mount | Surface Mount |
| Supplier Device Package | - | SOT-23 | SOT-23 |
| Power Max | - | 200mW | 200mW |
| Current Collector Ic Max | - | 100mA | 100mA |
| Voltage Collector Emitter Breakdown Max | - | 12V | 12V |
| DC Current Gain hFE Min Ic Vce | - | 80 @ 20mA, 10V | 50 @ 20mA, 10V |
| Frequency Transition | - | 7GHz | 7GHz |
| Noise Figure dB Typ f | - | 1.1dB @ 1GHz | 1.4dB ~ 2dB @ 1GHz |
| Gain | - | 11.5dB | 9dB |
| Pd Power Dissipation | - | 0.2 W | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
CEL |
NE85633-T1B-A | RF Bipolar Transistors NPN High Frequency | |
| NE85633-T1B-R24-A | RF Bipolar Transistors NPN High Frequency | ||
| NE85633-T1B-R25-A | RF Bipolar Transistors NPN High Frequency | ||
| NE85633-T1B-A | RF Bipolar Transistors NPN High Frequency | ||
| NE85633-T1B | TRANS NPN 1GHZ SOT-23 | ||
| NE85633-T1-A | 全新原装 | ||
| NE85633-T1B-R25 | NPN 200MW 12V 100MA 7GHZ |