 |  | | |
| PartNumber | NE856M02-T1-AZ | NE856M02-T1 | NE856M02-T1-A |
| Description | RF Bipolar Transistors NPN Low Distort Amp | ||
| Manufacturer | CEL | CEL | - |
| Product Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF | - |
| Series | - | - | - |
| Packaging | Digi-ReelR Alternate Packaging | Digi-ReelR Alternate Packaging | - |
| Part Aliases | 2SC5336-T1-AZ | 2SC5336-T1-AZ | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package Case | TO-243AA | TO-243AA | - |
| Technology | Si | Si | - |
| Mounting Type | Surface Mount | Surface Mount | - |
| Supplier Device Package | SOT-89 | SOT-89 | - |
| Configuration | Single | Single | - |
| Power Max | 1.2W | 1.2W | - |
| Transistor Type | NPN | NPN | - |
| Current Collector Ic Max | 100mA | 100mA | - |
| Voltage Collector Emitter Breakdown Max | 12V | 12V | - |
| DC Current Gain hFE Min Ic Vce | 50 @ 20mA, 10V | 50 @ 20mA, 10V | - |
| Frequency Transition | 6.5GHz | 6.5GHz | - |
| Noise Figure dB Typ f | 1.1dB @ 1GHz | 1.1dB @ 1GHz | - |
| Gain | 12dB | 12dB | - |
| Transistor Polarity | NPN | NPN | - |
| Continuous Collector Current | 0.1 A | 0.1 A | - |
| DC Collector Base Gain hfe Min | 250 | 250 | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
CEL |
NE856M02-T1-AZ | RF Bipolar Transistors NPN Low Distort Amp | |
| NE856M02-T1 | 全新原装 | ||
| NE856M02-T1-A | 全新原装 | ||
| NE856M02-T1-AZ/RF | 全新原装 |