NE978 stock, NE978, NE97833-T1B-A


PartNumber	NE97833-T1B-A	NE97833-A	NE97833
Description	RF Bipolar Transistors PNP High Frequency	RF Bipolar Transistors PNP High Frequency	RF Bipolar Transistors PNP High Frequency
Manufacturer	CEL	CEL	CEL
Product Category	RF Bipolar Transistors	Transistors - Bipolar (BJT) - RF	Transistors - Bipolar (BJT) - RF
RoHS	Y	-	-
Transistor Type	Bipolar	PNP	PNP
Technology	Si	Si	Si
Transistor Polarity	PNP	PNP	PNP
Continuous Collector Current	- 0.05 A	- 0.05 A	- 0.05 A
Configuration	Single	Single	Single
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	SOT-23-3	-	-
Packaging	Reel	Bulk Alternate Packaging	Bulk Alternate Packaging
Height	1.1 mm	-	-
Length	2.9 mm	-	-
Type	RF Bipolar Small Signal	-	-
Width	1.5 mm	-	-
Brand	CEL	-	-
Pd Power Dissipation	200 mW (1/5 W)	-	-
Product Type	RF Bipolar Transistors	-	-
Factory Pack Quantity	3000	-	-
Subcategory	Transistors	-	-
Part # Aliases	2SA1978-T1B-A	-	-
Unit Weight	0.000282 oz	0.007090 oz	0.007090 oz
Series	-	-	-
Package Case	-	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3
Mounting Type	-	Surface Mount	Surface Mount
Supplier Device Package	-	SOT-23	SOT-23
Power Max	-	200mW	200mW
Current Collector Ic Max	-	50mA	50mA
Voltage Collector Emitter Breakdown Max	-	12V	12V
DC Current Gain hFE Min Ic Vce	-	20 @ 15mA, 10V	20 @ 15mA, 10V
Frequency Transition	-	5.5GHz	5.5GHz
Noise Figure dB Typ f	-	2dB @ 1GHz	2dB @ 1GHz
Gain	-	10dB	10dB
Pd Power Dissipation	-	0.2 W	0.2 W
Collector Emitter Voltage VCEO Max	-	- 12 V	- 12 V
Emitter Base Voltage VEBO	-	- 3 V	- 3 V
DC Collector Base Gain hfe Min	-	40	40

Search Part Number : "NE978", Match & Start with "NE978" - Total : 7

制造商	型号	描述
CEL	NE97833-T1B-A	RF Bipolar Transistors PNP High Frequency
	NE97833-A	RF Bipolar Transistors PNP High Frequency
	NE97833-T1B-A	RF Bipolar Transistors PNP High Frequency
	NE97833	RF Bipolar Transistors PNP High Frequency
	NE97833-T1-A	全新原装
	NE97833-T1B	全新原装
	NE97833-T1-A/T93	全新原装

NE978