 |  | | |
| PartNumber | NESG250134-EVPW04 | NESG250134-T1-AZ | NESG250134-EV09-AZ |
| Description | RF Bipolar Transistors NPN Silicon Medium Pwr Transistor | RF Bipolar Transistors NPN Med Power Amp | RF Bipolar Transistors NPN Silicon Medium Pwr Transisto |
| Manufacturer | CEL | CEL | CEL |
| Product Category | RF Bipolar Transistors | RF Bipolar Transistors | RF Evaluation and Development Kits, Boards |
| RoHS | N | E | - |
| Transistor Type | Bipolar | Bipolar | - |
| Technology | SiGe | SiGe | - |
| Type | RF Silicon Germanium | RF Silicon Germanium | Transistor |
| Brand | CEL | CEL | - |
| Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 1000 | - |
| Subcategory | Transistors | Transistors | - |
| Transistor Polarity | - | NPN | - |
| DC Collector/Base Gain hfe Min | - | 80 | - |
| Collector Emitter Voltage VCEO Max | - | 9.2 V | - |
| Emitter Base Voltage VEBO | - | 2.8 V | - |
| Continuous Collector Current | - | 500 mA | - |
| Configuration | - | Single | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | Power Mini-Mold | - |
| Packaging | - | Reel | - |
| Operating Frequency | - | 900 MHz | - |
| Pd Power Dissipation | - | 1.5 W | - |
| For Use With Related Products | - | - | NESG250134 |
| Series | - | - | - |
| Frequency | - | - | - |
| Supplied Contents | - | - | Board |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
CEL |
NESG250134-EVPW04 | RF Bipolar Transistors NPN Silicon Medium Pwr Transistor | |
| NESG250134-T1-AZ | RF Bipolar Transistors NPN Med Power Amp | ||
| NESG250134-EVPW04 | RF Bipolar Transistors NPN Silicon Medium Pwr Transisto | ||
| NESG250134-EV09-AZ | RF Bipolar Transistors NPN Silicon Medium Pwr Transisto | ||
| NESG250134-T1-AZ | TRANS NPN 900MHZ SOT-89 | ||
| NESG250134 | 全新原装 | ||
| NESG250134-T1 | 全新原装 | ||
| NESG250134 -T1 | 全新原装 | ||
| NESG250134-AZ | RF Bipolar Transistors NPN Med Power Amp |