 |  | |
| PartNumber | NESG250134-T1-AZ | NESG250134-T1 |
| Description | RF Bipolar Transistors NPN Med Power Amp | |
| Manufacturer | CEL | CEL |
| Product Category | RF Bipolar Transistors | RF Transistors (BJT) |
| RoHS | E | - |
| Transistor Type | Bipolar | NPN |
| Technology | SiGe | - |
| Transistor Polarity | NPN | - |
| DC Collector/Base Gain hfe Min | 80 | - |
| Collector Emitter Voltage VCEO Max | 9.2 V | - |
| Emitter Base Voltage VEBO | 2.8 V | - |
| Continuous Collector Current | 500 mA | - |
| Configuration | Single | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | Power Mini-Mold | - |
| Packaging | Reel | Digi-ReelR |
| Operating Frequency | 900 MHz | - |
| Type | RF Silicon Germanium | - |
| Brand | CEL | - |
| Pd Power Dissipation | 1.5 W | - |
| Product Type | RF Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | Transistors | - |
| Series | - | - |
| Package Case | - | TO-243AA |
| Mounting Type | - | Surface Mount |
| Supplier Device Package | - | 3-PowerMiniMold |
| Power Max | - | 1.5W |
| Current Collector Ic Max | - | 500mA |
| Voltage Collector Emitter Breakdown Max | - | 9.2V |
| DC Current Gain hFE Min Ic Vce | - | 80 @ 100mA, 3V |
| Frequency Transition | - | 10GHz |
| Noise Figure dB Typ f | - | - |
| Gain | - | 23dB |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
CEL |
NESG250134-T1-AZ | RF Bipolar Transistors NPN Med Power Amp | |
| NESG250134-T1-AZ | TRANS NPN 900MHZ SOT-89 | ||
| NESG250134-T1 | 全新原装 |