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NGTB15N6

NGTB15N60R2FG vs NGTB15N60S vs NGTB15N60S1

 
PartNumberNGTB15N60R2FGNGTB15N60SNGTB15N60S1
DescriptionIGBT Transistors RC2 IGBT 15A 600V
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.85 V1.7 V1.7 V
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C24 A30 A30 A
Pd Power Dissipation54 W--
Maximum Operating Temperature+ 175 C--
PackagingTubeTubeTube
Continuous Collector Current Ic Max14 A--
BrandON Semiconductor--
Gate Emitter Leakage Current+/- 100 nA100 nA100 nA
Product TypeIGBT Transistors--
Factory Pack Quantity50--
SubcategoryIGBTs--
Unit Weight0.211644 oz0.081130 oz0.081130 oz
Series-NGTB15N60S1NGTB15N60S1
Package Case-TO-220-3TO-220-3
Input Type-StandardStandard
Mounting Type-Through HoleThrough Hole
Supplier Device Package-TO-220TO-220
Power Max-117W117W
Reverse Recovery Time trr-270ns270ns
Current Collector Ic Max-30A30A
Voltage Collector Emitter Breakdown Max-600V600V
IGBT Type-NPTNPT
Current Collector Pulsed Icm-120A120A
Vce on Max Vge Ic-1.7V @ 15V, 15A1.7V @ 15V, 15A
Switching Energy-550μJ (on), 350μJ (off)550μJ (on), 350μJ (off)
Gate Charge-88nC88nC
Td on off 25°C-65ns/170ns65ns/170ns
Test Condition-400V, 15A, 22 Ohm, 15V400V, 15A, 22 Ohm, 15V
Pd Power Dissipation-47 W47 W
Collector Emitter Voltage VCEO Max-600 V600 V
制造商 型号 描述 RFQ
NGTB15N60R2FG IGBT Transistors RC2 IGBT 15A 600V
NGTB15N60S1EG IGBT Transistors 15A 600V IGBT
NGTB15N60S 全新原装
NGTB15N60S1 全新原装
ON Semiconductor
ON Semiconductor 		NGTB15N60EG IGBT Transistors 15A 600V IGBT
NGTB15N60EG IGBT Transistors 15A 600V IGBT
NGTB15N60S1EG IGBT Transistors 15A 600V IGBT
NGTB15N60R2FG IGBT 15A 600V TO220-3
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