 |  | | |
| PartNumber | NGTB50N120FL2WG | NGTB50N120FL2WG 50N120FL2 | NGTB50N120FL2WG 50N120F |
| Description | IGBT Transistors 1200V/50A FAST IGBT FSII | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBTs - Single | - | - |
| Series | NGTB50N120FL2 | - | - |
| Packaging | Tube | - | - |
| Unit Weight | 0.229281 oz | - | - |
| Mounting Style | Through Hole | - | - |
| Package Case | TO-247-3 | - | - |
| Input Type | Standard | - | - |
| Mounting Type | Through Hole | - | - |
| Supplier Device Package | TO-247 | - | - |
| Configuration | Single | - | - |
| Power Max | 535W | - | - |
| Reverse Recovery Time trr | 256ns | - | - |
| Current Collector Ic Max | 100A | - | - |
| Voltage Collector Emitter Breakdown Max | 1200V | - | - |
| IGBT Type | Trench Field Stop | - | - |
| Current Collector Pulsed Icm | 200A | - | - |
| Vce on Max Vge Ic | 2.2V @ 15V, 50A | - | - |
| Switching Energy | 4.4mJ (on), 1.4mJ (off) | - | - |
| Gate Charge | 311nC | - | - |
| Td on off 25°C | 118ns/282ns | - | - |
| Test Condition | 600V, 50A, 10 Ohm, 15V | - | - |
| Pd Power Dissipation | 535 W | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.2 V | - | - |
| Continuous Collector Current at 25 C | 100 A | - | - |
| Gate Emitter Leakage Current | 200 nA | - | - |
| Maximum Gate Emitter Voltage | 30 V | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor |
NGTB50N120FL2WG | IGBT Transistors 1200V/50A FAST IGBT FSII | |
| NGTB50N120FL2WG 50N120FL2 | 全新原装 | ||
| NGTB50N120FL2WG 50N120F | 全新原装 |