 |  | | |
| PartNumber | NPTB00004A | NPTB00004 | NPTB00025 |
| Description | RF JFET Transistors DC-6.0GHz 5W Gain 16dB GaN HEMT | ||
| Manufacturer | MACOM | NITRONEX | M/A-COM |
| Product Category | RF JFET Transistors | RF FETs | IC Chips |
| RoHS | Y | - | - |
| Transistor Type | HEMT | - | - |
| Technology | GaN Si | - | - |
| Gain | 16 dB | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 1.4 A | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| Pd Power Dissipation | 11.6 W | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOIC-8 | - | - |
| Packaging | Tray | - | - |
| Operating Frequency | 6 GHz | - | - |
| Brand | MACOM | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | RF JFET Transistors | - | - |
| Rds On Drain Source Resistance | 1.6 Ohms | - | - |
| Factory Pack Quantity | 95 | - | - |
| Subcategory | Transistors | - | - |
| Vgs th Gate Source Threshold Voltage | - 1.6 V | - | - |
| Unit Weight | 0.007760 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
MACOM |
NPTB00004A | RF JFET Transistors DC-6.0GHz 5W Gain 16dB GaN HEMT | |
| NPTB00025B | RF JFET Transistors DC-4.0GHz 25W Gain 13.5dB GaN HEMT | ||
| NPTB00004 | 全新原装 | ||
| NPTB00025 | 全新原装 | ||
| NPTB00050 | 全新原装 | ||
| NPTB00004D | RF POWER TRANSISTOR | ||
| NPTB00004DT | 全新原装 | ||
MACOM |
NPTB00004A | RF JFET Transistors DC-6.0GHz 5W Gain 16dB GaN HEMT | |
| NPTB00025B | RF JFET Transistors DC-4.0GHz 25W Gain 13.5dB GaN HEMT |