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| PartNumber | NSBC124EDXV6T1G | NSBC124EDXV6 | NSBC124EDXV6T5 |
| Description | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN | |
| Manufacturer | ON Semiconductor | - | ON Semiconductor |
| Product Category | Bipolar Transistors - Pre-Biased | - | Transistors (BJT) - Arrays, Pre-Biased |
| RoHS | Y | - | - |
| Configuration | Dual | - | Dual |
| Transistor Polarity | NPN | - | NPN |
| Typical Input Resistor | 22 kOhms | - | 22 kOhms |
| Typical Resistor Ratio | 1 | - | 1 |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-563-6 | - | - |
| DC Collector/Base Gain hfe Min | 60 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 0.1 A | - | 0.1 A |
| Peak DC Collector Current | 100 mA | - | 100 mA |
| Pd Power Dissipation | 357 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Series | NSBC124EDXV6 | - | NSBC124EDXV6 |
| Packaging | Reel | - | Tape & Reel (TR) Alternate Packaging |
| DC Current Gain hFE Max | 60 | - | - |
| Height | 0.55 mm | - | - |
| Length | 1.6 mm | - | - |
| Width | 1.2 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000106 oz | - | 0.000289 oz |
| Package Case | - | - | SOT-563, SOT-666 |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-563 |
| Power Max | - | - | 500mW |
| Transistor Type | - | - | 2 NPN - Pre-Biased (Dual) |
| Current Collector Ic Max | - | - | 100mA |
| Voltage Collector Emitter Breakdown Max | - | - | 50V |
| Resistor Base R1 Ohms | - | - | 22k |
| Resistor Emitter Base R2 Ohms | - | - | 22k |
| DC Current Gain hFE Min Ic Vce | - | - | 60 @ 5mA, 10V |
| Vce Saturation Max Ib Ic | - | - | 250mV @ 300μA, 10mA |
| Current Collector Cutoff Max | - | - | 500nA |
| Frequency Transition | - | - | - |
| Pd Power Dissipation | - | - | 357 mW |
| Collector Emitter Voltage VCEO Max | - | - | 50 V |
| DC Collector Base Gain hfe Min | - | - | 60 |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| NSBC124EDXV6T1G | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN | ||
| NSBC124EDXV6T5G | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN | ||
| NSBC124EDXV6 | 全新原装 | ||
| NSBC124EDXV6T5 | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN | ||
ON Semiconductor |
NSBC124EDXV6T1 | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN | |
| NSBC124EDXV6T1 | TRANS 2NPN PREBIAS 0.5W SOT563 | ||
| NSBC124EDXV6T5G | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN | ||
| NSBC124EDXV6T1G | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN |