 | |  | |
| PartNumber | NSS1C301ET4G | NSS1C300ET4G | NSS1C300E |
| Description | Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V | Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors (BJT) - Single, Pre-Biased |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | DPAK-3 | DPAK-3 | - |
| Transistor Polarity | NPN | PNP | PNP |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 100 V | 100 V | - |
| Collector Base Voltage VCBO | 140 V | 140 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 0.115 V | 0.4 V | 0.4 V |
| Maximum DC Collector Current | 6 A | 3 A | 3 A |
| Gain Bandwidth Product fT | 120 MHz | 100 MHz | 100 MHz |
| Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | NSS1C301E | NSS1C300E | NSS1C300E |
| DC Current Gain hFE Max | 360 | 360 | 360 |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Continuous Collector Current | 3 A | 3 A | 3 A |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 33 W | 33 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.009185 oz | 0.012346 oz | 0.012346 oz |
| Package Case | - | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | DPAK-3 |
| Power Max | - | - | 2.1W |
| Transistor Type | - | - | PNP |
| Current Collector Ic Max | - | - | 3A |
| Voltage Collector Emitter Breakdown Max | - | - | 100V |
| DC Current Gain hFE Min Ic Vce | - | - | 120 @ 1A, 2V |
| Vce Saturation Max Ib Ic | - | - | 400mV @ 300mA, 3A |
| Current Collector Cutoff Max | - | - | 100nA (ICBO) |
| Frequency Transition | - | - | 100MHz |
| Pd Power Dissipation | - | - | 33 W |
| Collector Emitter Voltage VCEO Max | - | - | 100 V |
| Collector Base Voltage VCBO | - | - | 140 V |
| Emitter Base Voltage VEBO | - | - | 6 V |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| NSS1C301ET4G | Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V | ||
| NSS1C300ET4G | Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V | ||
| NSS1C300E | 全新原装 | ||
ON Semiconductor |
NSS1C300ET4G | Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V | |
| NSS1C301ET4G | Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V |