NSS301 stock, NSS301, NSS30101LT1G


PartNumber	NSS30101LT1G	NSS30100LT1G	NSS30100LT1G , FHD184
Description	Bipolar Transistors - BJT 1A 30V Low VCEsat	Bipolar Transistors - BJT 2A 30V Low VCEsat
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SOT-23-3	SOT-23-3	-
Transistor Polarity	NPN	PNP	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	30 V	- 30 V	-
Collector Base Voltage VCBO	50 V	- 50 V	-
Emitter Base Voltage VEBO	5 V	5 V	-
Collector Emitter Saturation Voltage	0.2 V	- 0.65 V	-
Maximum DC Collector Current	1 A	1 A	-
Gain Bandwidth Product fT	100 MHz	100 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	NSS30101LT1G	NSS30100LT1G	-
Height	0.94 mm	0.94 mm	-
Length	2.9 mm	2.9 mm	-
Packaging	Reel	Reel	-
Width	1.3 mm	1.3 mm	-
Brand	ON Semiconductor	ON Semiconductor	-
Continuous Collector Current	1 A	- 1 A	-
DC Collector/Base Gain hfe Min	300	-	-
Pd Power Dissipation	310 mW	310 mW	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	3000	3000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.000282 oz	0.000282 oz	-

Search Part Number : "NSS301", Match & Start with "NSS301" - Total : 8

制造商	型号	描述
	NSS30101LT1G	Bipolar Transistors - BJT 1A 30V Low VCEsat
	NSS30100LT1G	Bipolar Transistors - BJT 2A 30V Low VCEsat
	NSS30100LT1G , FHD184	全新原装
	NSS30101LT1G 882	全新原装
	NSS30101LT1GG	全新原装
	NSS3010LT1G	全新原装
ON Semiconductor	NSS30101LT1G	Bipolar Transistors - BJT 1A 30V Low VCEsat
ON Semiconductor	NSS30100LT1G	Bipolar Transistors - BJT 2A 30V Low VCEsat

NSS301