 |  | | |
| PartNumber | NSS30101LT1G | NSS30101LT1G 882 | NSS30101LT1GG |
| Description | Bipolar Transistors - BJT 1A 30V Low VCEsat | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 30 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.2 V | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | NSS30101LT1G | - | - |
| Height | 0.94 mm | - | - |
| Length | 2.9 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.3 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 1 A | - | - |
| DC Collector/Base Gain hfe Min | 300 | - | - |
| Pd Power Dissipation | 310 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000282 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| NSS30101LT1G | Bipolar Transistors - BJT 1A 30V Low VCEsat | ||
| NSS30101LT1G 882 | 全新原装 | ||
| NSS30101LT1GG | 全新原装 | ||
ON Semiconductor |
NSS30101LT1G | Bipolar Transistors - BJT 1A 30V Low VCEsat |