 |  | | |
| PartNumber | NST3904DP6T5G | NST3904DP6T5 | NST3904DXV6T1 |
| Description | Bipolar Transistors - BJT LESHAN DUAL NPN | Bipolar Transistors - BJT 200mA 60V Dual | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Arrays | Transistors (BJT) - Arrays |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-963-6 | - | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Dual | Dual | - |
| Collector Emitter Voltage VCEO Max | 40 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Maximum DC Collector Current | 0.2 A | 0.2 A | - |
| Gain Bandwidth Product fT | 200 MHz | 200 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | NST3904DP6 | NST3904DP6 | - |
| Height | 0.37 mm | - | - |
| Length | 1 mm | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Width | 0.8 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Pd Power Dissipation | 420 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 8000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000042 oz | - | - |
| Package Case | - | SOT-963 | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-963 | - |
| Power Max | - | 350mW | - |
| Transistor Type | - | 2 NPN (Dual) | - |
| Current Collector Ic Max | - | 200mA | - |
| Voltage Collector Emitter Breakdown Max | - | 40V | - |
| DC Current Gain hFE Min Ic Vce | - | 100 @ 10mA, 1V | - |
| Vce Saturation Max Ib Ic | - | 300mV @ 5mA, 50mA | - |
| Current Collector Cutoff Max | - | - | - |
| Frequency Transition | - | 200MHz | - |
| Pd Power Dissipation | - | 420 mW | - |
| Collector Emitter Voltage VCEO Max | - | 40 V | - |
| Collector Base Voltage VCBO | - | 60 V | - |
| Emitter Base Voltage VEBO | - | 6 V | - |
| DC Collector Base Gain hfe Min | - | 40 at 0.1 mA at 1 V 70 at 1 mA at 1 V 100 at 10 mA at 1 V 60 at 50 mA at 1 V 30 at 100 mA at 1 V | - |
| DC Current Gain hFE Max | - | 40 at 0.1 mA at 1 V | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| NST3904DXV6T1G | Bipolar Transistors - BJT 200mA 60V Dual Switching NPN | ||
| NST3904DP6T5G | Bipolar Transistors - BJT LESHAN DUAL NPN | ||
| NST3904DXV6T5G | Bipolar Transistors - BJT 200mA 60V Dual Switching NPN | ||
| NST3904DP6T5 | 全新原装 | ||
| NST3904DXV6T1 | Bipolar Transistors - BJT 200mA 60V Dual | ||
| NST3904DXV6T1 , FHS2907A | 全新原装 | ||
| NST3904DXV6T1/MAX | 全新原装 | ||
ON Semiconductor |
NST3904DXV6T5 | TRANS 2NPN 40V 0.2A SOT563 | |
| NST3904DP6T5G | Bipolar Transistors - BJT LESHAN DUAL NPN | ||
| NST3904DXV6T1G | Bipolar Transistors - BJT 200mA 60V Dual Switching NPN | ||
| NST3904DXV6T5G | Bipolar Transistors - BJT 200mA 60V Dual Switching NPN |