NSVBC858 stock, NSVBC858, NSVBC858AWT1G


PartNumber	NSVBC858AWT1G	NSVBC858CLT1G	NSVBC858BLT1G
Description	Bipolar Transistors - BJT SS SC70 GP XSTR PNP 30V	Bipolar Transistors - BJT SS SOT23 GP XSTR PNP 30V	Bipolar Transistors - BJT SS GP XSTR PNP 30V
Manufacturer	ON Semiconductor	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	Y	Y	Y
Series	BC856BWT1	BC858CL	BC858BL
Packaging	Reel	Reel	Reel
Brand	ON Semiconductor	ON Semiconductor	ON Semiconductor
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Qualification	AEC-Q101	AEC-Q101	AEC-Q101
Factory Pack Quantity	3000	3000	3000
Subcategory	Transistors	Transistors	Transistors
Technology	-	Si	-
Mounting Style	-	SMD/SMT	SMD/SMT
Package / Case	-	SOT-23-3	SOT-23-3
Transistor Polarity	-	PNP	PNP
Configuration	-	Single	Single
Collector Emitter Voltage VCEO Max	-	- 30 V	- 30 V
Collector Base Voltage VCBO	-	- 30 V	- 30 V
Emitter Base Voltage VEBO	-	- 5 V	- 5 V
Collector Emitter Saturation Voltage	-	- 0.65 V	-
Maximum DC Collector Current	-	- 100 mA	- 200 mA
Gain Bandwidth Product fT	-	100 MHz	-
Minimum Operating Temperature	-	- 55 C	- 55 C
Maximum Operating Temperature	-	+ 150 C	+ 150 C
DC Current Gain hFE Max	-	800 at -2 mA, - 5 V	475 at - 2 mA, - 5 V
DC Collector/Base Gain hfe Min	-	420 at - 2 mA, - 5 V	220 at - 2 mA, - 5 V
Pd Power Dissipation	-	300 mW	225 mW
Unit Weight	-	0.000282 oz	0.000282 oz
Continuous Collector Current	-	-	- 100 mA

Search Part Number : "NSVBC858", Match & Start with "NSVBC858" - Total : 6

制造商	型号	描述
	NSVBC858AWT1G	Bipolar Transistors - BJT SS SC70 GP XSTR PNP 30V
	NSVBC858CLT1G	Bipolar Transistors - BJT SS SOT23 GP XSTR PNP 30V
	NSVBC858BLT1G	Bipolar Transistors - BJT SS GP XSTR PNP 30V
ON Semiconductor	NSVBC858BLT1G	Bipolar Transistors - BJT SS GP XSTR PNP 30V
	NSVBC858AWT1G	Bipolar Transistors - BJT SS SC70 GP XSTR PNP 30V
	NSVBC858CLT1G	Bipolar Transistors - BJT SS SOT23 GP XSTR PNP 30V

NSVBC858