NSVMMBT6 stock, NSVMMBT6, NSVMMBT6429LT1G


PartNumber	NSVMMBT6429LT1G	NSVMMBT6520LT1G	NSVMMBT6517LT1G
Description	Bipolar Transistors - BJT NPN Bipolar Trnsistr	Bipolar Transistors - BJT SS SOT23 HV XSTR PNP 350V	Bipolar Transistors - BJT SS SOT23 HV XSTR NPN 35
Manufacturer	ON Semiconductor	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	Y	Y	Y
Technology	Si	Si	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SOT-23-3	TO-236-3	-
Transistor Polarity	NPN	PNP	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	45 V	- 350 V	-
Collector Base Voltage VCBO	55 V	- 350 V	-
Emitter Base Voltage VEBO	6 V	- 5 V	-
Collector Emitter Saturation Voltage	200 mV	- 500 mV	-
Maximum DC Collector Current	200 mA	- 500 mA	-
Gain Bandwidth Product fT	700 MHz	40 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	MMBT6429L	MMBT6520L	MMBT6517L
DC Current Gain hFE Max	1250 at 100 uA, 5 VDC	200	-
Packaging	Reel	Reel	Reel
Brand	ON Semiconductor	ON Semiconductor	ON Semiconductor
DC Collector/Base Gain hfe Min	500 at 100 uA, 5 VDC	30	-
Pd Power Dissipation	225 mW	225 mW	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Qualification	AEC-Q101	AEC-Q101	-
Factory Pack Quantity	3000	3000	3000
Subcategory	Transistors	Transistors	Transistors
Unit Weight	0.000282 oz	0.000423 oz	-

Search Part Number : "NSVMMBT6", Match & Start with "NSVMMBT6" - Total : 6

制造商	型号	描述
	NSVMMBT6429LT1G	Bipolar Transistors - BJT NPN Bipolar Trnsistr
	NSVMMBT6520LT1G	Bipolar Transistors - BJT SS SOT23 HV XSTR PNP 350V
ON Semiconductor	NSVMMBT6517LT1G	Bipolar Transistors - BJT SS SOT23 HV XSTR NPN 35
	NSVMMBT6429LT1G	TRANS NPN 45V 0.2A SOT23
	NSVMMBT6520LT1G	Bipolar Transistors - BJT SS SOT23 HV XSTR PNP 350V
	NSVMMBT6517LT1G	Bipolar Transistors - BJT SS SOT23 HV XSTR NPN 350V

NSVMMBT6