NTD5804

NTD5804NT4G vs NTD5804N vs NTD5804NG

 
PartNumberNTD5804NT4GNTD5804NNTD5804NG
DescriptionMOSFET NFET DPAK 40V 69A 8.5mOhm
ManufacturerON SemiconductorON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current69 A--
Rds On Drain Source Resistance5.7 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge45 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation71 W--
ConfigurationSingle--
PackagingReel--
SeriesNTD5804N--
Transistor Type1 N-Channel--
TypePower MOSFET--
BrandON Semiconductor--
Forward Transconductance Min12 S--
Fall Time5.9 ns--
Product TypeMOSFET--
Rise Time18.7 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Unit Weight0.139332 oz--
制造商 型号 描述 RFQ
ON Semiconductor
ON Semiconductor
NTD5804NT4G MOSFET NFET DPAK 40V 69A 8.5mOhm
NTD5804NT4G IGBT Transistors MOSFET NFET DPAK 40V 69A 8.5mOhm
NTD5804N 全新原装
NTD5804NG 全新原装
Top