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| PartNumber | NTHD3102CT1G | NTHD3102CT1G , FLZ24VC | NTHD3102CT1G-CUT TAPE |
| Description | MOSFET 20V 5.5A/-4.2A Complementary | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | ChipFET-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 5.5 A | - | - |
| Rds On Drain Source Resistance | 45 mOhms, 80 mOhms | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 600 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.05 mm | - | - |
| Length | 3.05 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | NTHD3102C | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 1.65 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 7.7 S, 5.9 S | - | - |
| Fall Time | 15.9 ns, 16.9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15.9 ns, 16.9 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16.4 ns, 15.7 ns | - | - |
| Typical Turn On Delay Time | 7.2 ns, 6.4 ns | - | - |
| Unit Weight | 0.002998 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| NTHD3102CT1G | MOSFET 20V 5.5A/-4.2A Complementary | ||
| NTHD3102CT1G , FLZ24VC | 全新原装 | ||
| NTHD3102CT1G-CUT TAPE | 全新原装 | ||
ON Semiconductor |
NTHD3102CT1G | MOSFET N/P-CH 20V 4A/3.1A 1206A |