 |  | | |
| PartNumber | NVB6411ANT4G | NVB60N06 | NVB6410AN |
| Description | MOSFET NFET D2PAK 100V 75A 16MO | ||
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-263-3 | - | - |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 77 A | - | - |
| Rds On Drain Source Resistance | 14 mOhms | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | Reel |
| Series | NTB6411AN | NTB60N06 | NTB6410AN |
| Brand | ON Semiconductor | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 188 W |
| Id Continuous Drain Current | - | - | 76 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Rds On Drain Source Resistance | - | - | 13 mOhms |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| NVB6411ANT4G | MOSFET NFET D2PAK 100V 75A 16MO | ||
| NVB60N06 | 全新原装 | ||
| NVB6410AN | 全新原装 | ||
| NVB6412ANG | 全新原装 | ||
| NVB6413AN | 全新原装 | ||
ON Semiconductor |
NVB6413ANT4G | MOSFET NFET D2PAK 100V 40A 30MO | |
| NVB60N06T4G | MOSFET N-CH 60V D2PAK | ||
| NVB6412ANT4G | MOSFET N-CH 100V 59A D2PAK | ||
| NVB6413ANT4G | Darlington Transistors MOSFET NFET D2PAK 100V 40A 30MO | ||
| NVB6410ANT4G | IGBT Transistors MOSFET NFET D2PAK 100V 76A 13MOH | ||
| NVB6411ANT4G | RF Bipolar Transistors MOSFET NFET D2PAK 100V 75A 16MO |