 |  |  | |
| PartNumber | NVD6820NLT4G | NVD6820NLT4G-VF01 | NVD6820NLT4GP |
| Description | MOSFET NFET DPAK 90V 50A 17MOHM | MOSFET NFET DPAK 90V 50A 17MOHM | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | DPAK-3 | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 90 V | 90 V | - |
| Id Continuous Drain Current | 50 A | 50 A | - |
| Rds On Drain Source Resistance | 16.7 mOhms | 16.7 mOhms | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Series | NVD6820NL | - | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.139332 oz | - | - |
| Number of Channels | - | 1 Channel | - |
| Vgs th Gate Source Threshold Voltage | - | 1.5 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 83 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 100 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Fall Time | - | 59 ns | - |
| Rise Time | - | 98 ns | - |
| Typical Turn Off Delay Time | - | 36 ns | - |
| Typical Turn On Delay Time | - | 19 ns | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| NVD6820NLT4G | MOSFET NFET DPAK 90V 50A 17MOHM | ||
| NVD6820NLT4GP | 全新原装 | ||
| NVD6820NLT4G | RF Bipolar Transistors MOSFET NFET DPAK 90V 50A 17MOHM | ||
ON Semiconductor |
NVD6820NLT4G-VF01 | MOSFET NFET DPAK 90V 50A 17MOHM | |
| NVD6820NLT4G-VF01 | MOSFET N-CH 90V 50A DPAK |