 |  | | |
| PartNumber | NXH80B120H2Q0SG | NXH80T120L2Q0S2G | NXH80T120L2Q0SG |
| Description | IGBT Modules PIM 1200V 40A DU BST SiC DIODE | PIM 1200V, 80A TNPC CUSTO | MODULE PIM 80A 1200V PIM20 |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | Y | - | - |
| Technology | SiC | - | - |
| Product | IGBT Silicon Carbide Modules | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.2 V | - | - |
| Continuous Collector Current at 25 C | 40 A | - | - |
| Gate Emitter Leakage Current | 200 nA | - | - |
| Pd Power Dissipation | 103 W | - | - |
| Package / Case | Q0BOOST | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Packaging | Tray | - | - |
| Brand | ON Semiconductor | - | - |
| Mounting Style | Press Fit | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 24 | - | - |
| Subcategory | IGBTs | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor |
NXH80B120H2Q0SG | IGBT Modules PIM 1200V 40A DU BST SiC DIODE | |
| NXH80B120H2Q0SG | PIM 1200V, 40A DUAL BOOST | ||
| NXH80T120L2Q0S2G | PIM 1200V, 80A TNPC CUSTO | ||
| NXH80T120L2Q0SG | MODULE PIM 80A 1200V PIM20 | ||
| NXH80T120L2Q0S1G | IGBT Modules PIM 1200V 80A TNPC CUST T-TYPE MODULE | ||
| NXH80T120L2Q0S1G | T-Type NPC Power Module 1200 V, 55 A IGBT, 600 V, 50 A IGBT |