| PartNumber | PBHV8515QAZ | PBHV8540T,215 | PBHV8540X,115 |
| Description | Bipolar Transistors - BJT PBHV8515QA/DFN1010D-3/REEL 7 | Bipolar Transistors - BJT HIGH VOLTAGE BISS | Bipolar Transistors - BJT 500V 0.5A NPN high vltg low VCEsat tran |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Package / Case | DFN-1010D-3 | SOT-23-3 | SOT-89-3 |
| Packaging | Reel | Reel | Reel |
| Brand | Nexperia | Nexperia | Nexperia |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 5000 | 3000 | 1000 |
| Subcategory | Transistors | Transistors | Transistors |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Transistor Polarity | - | NPN | NPN |
| Configuration | - | Single | Single |
| Collector Emitter Voltage VCEO Max | - | 400 V | 400 V |
| Collector Base Voltage VCBO | - | 500 V | 500 V |
| Emitter Base Voltage VEBO | - | 6 V | 6 V |
| Maximum DC Collector Current | - | 1 A | - |
| Gain Bandwidth Product fT | - | 30 MHz | 30 MHz |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| DC Current Gain hFE Max | - | 100 at 50 mA, 10 V | 200 |
| Height | - | 1 mm | - |
| Length | - | 3 mm | - |
| Width | - | 1.4 mm | - |
| Continuous Collector Current | - | 500 mA | 0.5 A |
| DC Collector/Base Gain hfe Min | - | 200 | - |
| Pd Power Dissipation | - | 300 mW | 1.5 W |
| Part # Aliases | - | PBHV8540T T/R | - |
| Unit Weight | - | 0.000282 oz | 0.003880 oz |
| Technology | - | - | Si |
| Collector Emitter Saturation Voltage | - | - | 0.2 V |