 |  | | |
| PartNumber | PBSS4220V,115 | PBSS4220V | PBSS4220V T/R |
| Description | Bipolar Transistors - BJT LO VCESAT(BISS)TRANS | Bipolar Transistors - BJT LO VCESAT(BISS)TRANS TAPE-7 | |
| Manufacturer | Nexperia | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SSmini-6 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 20 V | - | - |
| Collector Base Voltage VCBO | 20 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 2 A | - | - |
| Gain Bandwidth Product fT | 210 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 220 at 1 mA, 2 V | - | - |
| Height | 0.6 mm | - | - |
| Length | 1.7 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.3 mm | - | - |
| Brand | Nexperia | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 900 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | PBSS4220V T/R | - | - |
| Unit Weight | 0.000102 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PBSS4220V,115 | Bipolar Transistors - BJT LO VCESAT(BISS)TRANS | |
| PBSS4220V,115 | Bipolar Transistors - BJT LO VCESAT(BISS)TRANS | ||
| PBSS4220V | 全新原装 | ||
| PBSS4220V115 | Now Nexperia PBSS4220V - Small Signal Bipolar Transistor, SOT6 | ||
| PBSS4220V T/R | Bipolar Transistors - BJT LO VCESAT(BISS)TRANS TAPE-7 |