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| PartNumber | PHB191NQ06LT,118 | PHB191NQ06LT | PHB191NQ06LT118 |
| Description | MOSFET N-CH TRENCH 55V | Now Nexperia PHB191NQ06LT - Power Field-Effect Transistor, 75A I(D), 55V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 75 A | - | - |
| Rds On Drain Source Resistance | 3.7 mOhms | - | - |
| Vgs Gate Source Voltage | 15 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.5 mm | - | - |
| Length | 10.3 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.4 mm | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 178 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 232 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 273 ns | - | - |
| Typical Turn On Delay Time | 63 ns | - | - |
| Part # Aliases | /T3 PHB191NQ06LT | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PHB191NQ06LT,118 | MOSFET N-CH TRENCH 55V | |
| PHB191NQ06LT,118 | MOSFET N-CH TRENCH 55V | ||
| PHB191NQ06LT | 全新原装 | ||
| PHB191NQ06LT118 | Now Nexperia PHB191NQ06LT - Power Field-Effect Transistor, 75A I(D), 55V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK |