 |  | | |
| PartNumber | PHT4NQ10T,135 | PHT4NQ10T | PHT4NQ10 |
| Description | MOSFET TAPE13 PWR-MOS | ||
| Manufacturer | Nexperia | NXP | PHILIPS |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 3.5 A | - | - |
| Rds On Drain Source Resistance | 250 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 6.9 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.7 mm | - | - |
| Length | 6.7 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.7 mm | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 11 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 13 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 8 ns | - | - |
| Part # Aliases | /T3 PHT4NQ10T | - | - |
| Unit Weight | 0.008818 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PHT4NQ10T,135 | MOSFET TAPE13 PWR-MOS | |
| PHT4NQ10T,135 | MOSFET N-CH 100V 3.5A SOT223 | ||
| PHT4NQ10T | 全新原装 | ||
| PHT4NQ10 | 全新原装 | ||
| PHT6N06 | 全新原装 | ||
| PHT6N06T | 5.5 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| PHT30016 | 全新原装 | ||
| PHT3008 | 全新原装 | ||
| PHT3008CF | 全新原装 | ||
| PHT3008CT | 全新原装 | ||
| PHT308C | 全新原装 | ||
| PHT317N | 全新原装 | ||
| PHT32251B-1R0MS/PST3225 | 全新原装 | ||
| PHT32251B-1R0MS/PST32251 | 全新原装 | ||
| PHT40012 | 全新原装 | ||
| PHT40016 | 全新原装 | ||
| PHT4008 | 全新原装 | ||
| PHT4008S | 全新原装 | ||
| PHT400N16 | 全新原装 | ||
| PHT400N8S | 全新原装 | ||
| PHT45016 | 全新原装 | ||
| PHT4NQ10L | 全新原装 | ||
| PHT4NQ10LT | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.5A I(D), 100V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
| PHT4NQ10LT , H9TKNNN8JDA | 全新原装 | ||
| PHT4NQ10LT , H9TKNNN8JDARHR-NGM | 全新原装 | ||
| PHT4NQ10LT+135 | 全新原装 | ||
| PHT4NQ10LT135 | 全新原装 | ||
| PHT4NQ10T , H9TQ17ADFTAC | 全新原装 | ||
| PHT4NQ10T , H9TQ17ADFTACUR-KUM | 全新原装 | ||
| PHT4NQ10T 135 | 全新原装 | ||
| PHT4NQ10T135 | 全新原装 | ||
| PHT5 | 全新原装 | ||
| PHT608C | 全新原装 | ||
| PHT6N03 | 全新原装 | ||
| PHT6N03LT | 全新原装 | ||
| PHT6N03T | 全新原装 | ||
| PHT6N03T , HA17358F | 全新原装 | ||
| PHT6N06LI | 全新原装 | ||
| PHT6N06LT | MOSFET Transistor, N Channel, 2.5 A, 55 V, 150 mohm, 5 V, 1.5 V RoHS Compliant: Yes | ||
| PHT6N06LT , HA17431HLPEL | 全新原装 | ||
| PHT6N06LT-135 | 全新原装 | ||
| PHT6N06LT135 | Now Nexperia PHT6N06LT - Power Field-Effect Transistor, 2.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-73 | ||
| PHT6N06T , HA17812 | 全新原装 | ||
| PHT6N06T-135 | 全新原装 | ||
| PHT6N06T135 | Now Nexperia PHT6N06T - Power Field-Effect Transistor, 5.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-73 | ||
| PHT6N06T35 | 全新原装 | ||
| PHT6NQ10T | MOSFET, N CH, 100V, 6.5A, SOT223 | ||
NXP Semiconductors |
PHT4NQ10LT,135 | MOSFET N-CH 100V 3.5A SC73 | |
| PHT6N06LT,135 | MOSFET N-CH 55V 2.5A SOT223 | ||
| PHT6N06T,135 | MOSFET N-CH 55V 5.5A SOT223 |