PMDPB38

PMDPB38UNE vs PMDPB38UNE115 vs PMDPB38UNE,115

 
PartNumberPMDPB38UNEPMDPB38UNE115PMDPB38UNE,115
DescriptionNow Nexperia PMDPB38UNE - Small Signal Field-Effect Transistor, HUSON6IGBT Transistors MOSFET PMDPB38UNE/HUSON6/REEL7
Manufacturer--NXP Semiconductors
Product Category--FETs - Arrays
Series---
Packaging--Digi-ReelR
Package Case--6-UDFN Exposed Pad
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--6-HUSON (2x2)
FET Type--2 N-Channel (Dual)
Power Max--510mW
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds--268pF @ 10V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--4A
Rds On Max Id Vgs--46 mOhm @ 3A, 4.5V
Vgs th Max Id--1V @ 250μA
Gate Charge Qg Vgs--4.4nC @ 4.5V
制造商 型号 描述 RFQ
PMDPB38UNE 全新原装
PMDPB38UNE115 Now Nexperia PMDPB38UNE - Small Signal Field-Effect Transistor, HUSON6
NXP Semiconductors
NXP Semiconductors
PMDPB38UNE,115 IGBT Transistors MOSFET PMDPB38UNE/HUSON6/REEL7
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