| PartNumber | PMPB85ENEAX | PMPB85ENEA/FX |
| Description | MOSFET 60V single N-channel Trench MOSFET | MOSFET PMPB85ENEA/F/SOT1220/REEL 7" Q |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | DFN-2020MD-6 | DFN-2020MD-6 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - |
| Id Continuous Drain Current | 4.4 A | - |
| Rds On Drain Source Resistance | 72 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.3 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 9.2 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 3.3 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel |
| Transistor Type | 1 N-Channel | - |
| Brand | Nexperia | Nexperia |
| Forward Transconductance Min | 11.5 S | - |
| Fall Time | 4.5 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 3.5 ns | - |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 10.5 ns | - |
| Typical Turn On Delay Time | 4 ns | - |
| Unit Weight | 0.000254 oz | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PMPB85ENEAX | MOSFET 60V single N-channel Trench MOSFET | |
| PMPB85ENEA/FX | MOSFET PMPB85ENEA/F/SOT1220/REEL 7" Q | ||
| PMPB85ENEAX | MOSFET N-CH 60V 3A SOT1220 | ||
| PMPB85ENEA/FX | MOSFET N-CH 60V 4.4A 6DFN2020MD | ||
| PMPB85ENEA | MOSFET Transistor, N Channel, 3 A, 60 V, 0.072 ohm, 10 V, 1.7 V RoHS Compliant: Yes | ||
| PMPB85ENEA115 | Now Nexperia PMPB85ENEA Power Field-Effect Transistor, 3A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT1220 |