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| PartNumber | PSMN028-100YS,115 | PSMN028-100YS | PSMN028-100YS115 |
| Description | MOSFET N-CHANNEL 100V STD LEVEL MOSFET | Now Nexperia Power Field-Effect Transistor, 30A I(D), 100V, 0.0275ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | LFPAK56-5 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 42 A | - | - |
| Rds On Drain Source Resistance | 52 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4.7 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 33 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 89 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.1 mm | - | - |
| Length | 5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | N-Channel LFPAK 100 V 27.5 mOhms Standard Level MOSFET | - | - |
| Width | 4.1 mm | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 14 ns | - | - |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 33 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Unit Weight | 0.002871 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PSMN028-100YS,115 | MOSFET N-CHANNEL 100V STD LEVEL MOSFET | |
| PSMN028-100YS,115 | MOSFET N-CH 100V 42A LFPAK | ||
| PSMN028-100YS | 全新原装 | ||
| PSMN028-100YS115 | Now Nexperia Power Field-Effect Transistor, 30A I(D), 100V, 0.0275ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK |