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| PartNumber | PSMN4R2-30MLDX | PSMN4R2-30MLD | PSMN4R2-30MLD,115 |
| Description | MOSFET 30V N-Channel 2.4mOhm | ||
| Manufacturer | Nexperia | NXP Semiconductors | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | E | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | LFPAK56-5 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 70 A | - | - |
| Rds On Drain Source Resistance | 5.7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.2 V | - | - |
| Vgs Gate Source Voltage | 2.2 V | - | - |
| Qg Gate Charge | 29.3 nC | - | - |
| Pd Power Dissipation | 65 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Nexperia | - | - |
| Fall Time | 8.7 ns | 8.7 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 18.5 ns | 18.5 ns | - |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12 ns | 12 ns | - |
| Typical Turn On Delay Time | 10.1 ns | 10.1 ns | - |
| Unit Weight | 0.001810 oz | - | - |
| Package Case | - | LFPAK-4 | - |
| Pd Power Dissipation | - | 65 W | - |
| Vgs Gate Source Voltage | - | 2.2 V | - |
| Id Continuous Drain Current | - | 70 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2.2 V | - |
| Rds On Drain Source Resistance | - | 5.7 mOhms | - |
| Qg Gate Charge | - | 29.3 nC | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PSMN4R2-30MLDX | MOSFET 30V N-Channel 2.4mOhm | |
| PSMN4R2-30MLDX | IGBT Transistors MOSFET 30V N-Channel 2.4mOhm | ||
| PSMN4R2-30MLD | 全新原装 | ||
| PSMN4R2-30MLD,115 | 全新原装 |