PSMN4R4-80P

PSMN4R4-80PS,127 vs PSMN4R4-80PS vs PSMN4R4-80PS127

 
PartNumberPSMN4R4-80PS,127PSMN4R4-80PSPSMN4R4-80PS127
DescriptionMOSFET N-CH 80V 4.1 mOhm Standard level FETMOSFET Transistor, N Channel, 100 A, 80 V, 3.3 mohm, 10 V, 3 V RoHS Compliant: YesNow Nexperia PSMN4R4-80PS - Power Field-Effect Transistor, 100A I(D), 80V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance4.1 mOhms--
Pd Power Dissipation306 W--
ConfigurationSingle--
PackagingTube--
Transistor Type1 N-Channel--
BrandNexperia--
Fall Time18.4 ns--
Product TypeMOSFET--
Rise Time38.1 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time66 ns--
Typical Turn On Delay Time34.7 ns--
Unit Weight0.211644 oz--
制造商 型号 描述 RFQ
Nexperia
Nexperia
PSMN4R4-80PS,127 MOSFET N-CH 80V 4.1 mOhm Standard level FET
PSMN4R4-80PS,127 MOSFET N-CH 80V 4.1 mOhm Standard level FET
PSMN4R4-80PS MOSFET Transistor, N Channel, 100 A, 80 V, 3.3 mohm, 10 V, 3 V RoHS Compliant: Yes
PSMN4R4-80PS127 Now Nexperia PSMN4R4-80PS - Power Field-Effect Transistor, 100A I(D), 80V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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