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| PartNumber | PSMN6R5-80BS,118 | PSMN6R5-80BS | PSMN6R5-80BS118 |
| Description | MOSFET N-CH 80 V 46 MOHM MOSFET | MOSFET, N CHANNEL, 80V, 100A, D2PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0059ohm, Rds(on) Test Voltage Vgs:10V, | Now Nexperia PSMN6R5-80BS - Power Field-Effect Transistor, 100A I(D), 80V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 73 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 6.9 mOhms | - | - |
| Vgs Gate Source Voltage | 4.3 V | - | - |
| Pd Power Dissipation | 210 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PSMN6R5-80BS,118 | MOSFET N-CH 80 V 46 MOHM MOSFET | |
| PSMN6R5-80BS,118 | IGBT Transistors MOSFET N-CH 80 V 46 MOHM MOSFET | ||
| PSMN6R5-80BS | MOSFET, N CHANNEL, 80V, 100A, D2PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0059ohm, Rds(on) Test Voltage Vgs:10V, | ||
| PSMN6R5-80BS118 | Now Nexperia PSMN6R5-80BS - Power Field-Effect Transistor, 100A I(D), 80V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |