 | |  | |
| PartNumber | PT5529B/L2/H2-F | PT5529B/L1/H3 | PT5529B/L2-F |
| Description | Phototransistors IR Phototransistor | Optical Sensors Phototransistors Dual Phototransisto | Optical Sensors Phototransistors IR Phototransisto |
| Manufacturer | Everlight | - | Everlight Electronics Co Ltd |
| Product Category | Phototransistors | - | Optical Sensors - Phototransistors |
| RoHS | Y | - | - |
| Product | Phototransistors | - | Phototransistors |
| Brand | Everlight | - | - |
| Product Type | Phototransistors | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | Optical Detectors and Sensors | - | - |
| Series | - | - | - |
| Type | - | - | Side Face Silicon Phototransistor |
| Packaging | - | - | Bulk |
| Mounting Style | - | - | Through Hole |
| Package Case | - | - | Side View |
| Operating Temperature | - | - | -40°C ~ 85°C (TA) |
| Mounting Type | - | - | Through Hole |
| Power Max | - | - | - |
| Current Collector Ic Max | - | - | 20mA |
| Voltage Collector Emitter Breakdown Max | - | - | 30V |
| Orientation | - | - | Side View |
| Wavelength | - | - | 940nm |
| Current Dark Id Max | - | - | 100nA |
| Viewing Angle | - | - | - |
| Pd Power Dissipation | - | - | 75 mW |
| Maximum Operating Temperature | - | - | + 85 C |
| Minimum Operating Temperature | - | - | - 25 C |
| Collector Emitter Voltage VCEO Max | - | - | 30 V |
| Fall Time | - | - | 15 us |
| Rise Time | - | - | 15 us |
| Collector Emitter Saturation Voltage | - | - | 0.4 V |
| Dark Current | - | - | 100 nA |
| Maximum On State Collector Current | - | - | 20 mA |
| Collector Emitter Breakdown Voltage | - | - | 30 V |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Everlight |
PT5529B/L2/H2-F | Phototransistors IR Phototransistor | |
| PT5529B/L1/H3 | Optical Sensors Phototransistors Dual Phototransisto | ||
| PT5529B/L2/H2-F | Optical Sensors Phototransistors IR Phototransisto | ||
| PT5529B/L2-F | Optical Sensors Phototransistors IR Phototransisto |