 |  | | |
| PartNumber | PTF180101S V1 | PTF180101M V1 | PTF180101S |
| Description | RF MOSFET Transistors Hi Pwr RF LDMOS FET 10W 1805-1880 MHz | IC FET RF LDMOS 10W TSSOP-10 | |
| Manufacturer | Infineon | - | - |
| Product Category | RF MOSFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | - | - |
| Vds Drain Source Breakdown Voltage | 65 V | - | - |
| Rds On Drain Source Resistance | 830 mOhms | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Packaging | Reel | - | - |
| Configuration | Single | - | - |
| Type | RF Power MOSFET | - | - |
| Brand | Infineon Technologies | - | - |
| Channel Mode | Enhancement | - | - |
| Pd Power Dissipation | 58 W | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | - 0.5 V to 12 V | - | - |
| Part # Aliases | F180101SV1XT SP000009989 | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
PTF180101S V1 | RF MOSFET Transistors Hi Pwr RF LDMOS FET 10W 1805-1880 MHz | |
Infineon Technologies |
PTF180101M V1 | IC FET RF LDMOS 10W TSSOP-10 | |
| PTF180101S V1 | FET RF 65V 1.99GHZ H-32259-2 | ||
| PTF180101S | 全新原装 |