R6004E

R6004END3TL1 vs R6004E vs R6004END

 
PartNumberR6004END3TL1R6004ER6004END
DescriptionMOSFET NCH 600V 4A POWER MOSFET
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance980 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge15 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation59 W--
ConfigurationSingle1 N-Channel-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Transistor Type1 N-Channel1 N-Channel-
BrandROHM Semiconductor--
Fall Time40 ns40 ns-
Product TypeMOSFET--
Rise Time22 ns22 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time55 ns55 ns-
Typical Turn On Delay Time22 ns22 ns-
Series-R6004END-
Package Case-SOT-428-3-
Pd Power Dissipation-20 W-
Vgs Gate Source Voltage-+/- 20 V-
Id Continuous Drain Current-4 A-
Vds Drain Source Breakdown Voltage-600 V-
Vgs th Gate Source Threshold Voltage-2 V-
Rds On Drain Source Resistance-980 mOhms-
Qg Gate Charge-15 nC-
Forward Transconductance Min-1.5 S-
制造商 型号 描述 RFQ
R6004ENX MOSFET 10V Drive Nch MOSFET
R6004ENJTL MOSFET 10V Drive Nch MOSFET
R6004END3TL1 MOSFET NCH 600V 4A POWER MOSFET
R6004ENDTL MOSFET 10V Drive Nch MOSFET
R6004E 全新原装
R6004END 全新原装
R6004END3TL1 Power MOSFET N-Channel 600V 4A 3-Pin TO-252 Emboss T/R - Tape and Reel (Alt: R6004END3TL1)
R6004ENDTL MOSFET N-CH 600V 4A CPT3
R6004ENJ 全新原装
R6004ENJTL MOSFET N-CH 600V 4A LPT
R6004ENNX 全新原装
R6004ENX MOSFET N-CH 600V 4A TO220
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