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| PartNumber | R6006ANDTL | R6006AND | R6006AND TL |
| Description | MOSFET LO CURR HI EFF MOSFT HI BREAKDWN RESIST | ||
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 6 A | - | - |
| Rds On Drain Source Resistance | 900 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 15 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 40 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | ROHM Semiconductor | - | - |
| Forward Transconductance Min | 1.7 S | - | - |
| Fall Time | 35 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 36 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 50 ns | - | - |
| Typical Turn On Delay Time | 22 ns | - | - |
| Part # Aliases | R6006AND | - | - |
| Unit Weight | 0.011993 oz | - | - |