RF1S3

RF1S30N06LE vs RF1S30N06LESM vs RF1S30N06LESM 9AR4365

 
PartNumberRF1S30N06LERF1S30N06LESMRF1S30N06LESM 9AR4365
DescriptionPower Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
制造商 型号 描述 RFQ
RF1S30N06LE Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RF1S30N06LESM 全新原装
RF1S30N06LESM 9AR4365 全新原装
RF1S30N06LESM9A Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S30N06LESM9AR4365 全新原装
RF1S30N06LESMR4365 全新原装
RF1S30N06LSM 全新原装
RF1S30N15 全新原装
RF1S30P03 全新原装
RF1S30P05 Power Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RF1S30P05+SM - Bulk (Alt: RF1S30P05SM)
RF1S30P05SM - Bulk (Alt: RF1S30P05SM)
RF1S30P05SM9A 全新原装
RF1S30P06 Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RF1S30P06SM Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S30P06SM9A MOSFET -60V Single
RF1S30P06SM9AS 全新原装
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